A research team from Fudan University in Shanghai, China, has achieved a remarkable innovation in the field of data storage technologies. The new generation memory solution, called “POX, has shown the highest performance in writing speeds so far. In the tests, it was found that the device was able to write one bit data in only 400 picosania. This speed has seriously overcome the access times of existing flash memories, creating a new reference point.
Pox technology contains a two -dimensional graphene channel and a load trap layer. Especially thanks to the use of Dirac graphene, the conductivity performance of the device was significantly increased. Supported by the hot carrier injection mechanism, this structure brings speed and durability in data writing and reading operations. In addition, Pox offers a much lower delay time compared to traditional Nand Flash memory.
On the other hand, data safety is of great importance in memory technologies as well as speed. At this point, the Pox device performs an ambitious performance. In long -term tests, the device was able to maintain data integrity for 10 years. In addition, there was no significant decrease in the functionality of the device during the 5.5 million cycles.
The Pox device developed by Fudan University can give a new direction to the data storage sector.
Nowadays, volatil memory offers high speed, while the energy is cut when it is cut off, it has a fundamental disadvantage of losing data. In contrast, Non-volatil memory provides data permanence, but it is left behind in terms of speed. Pox technology aims to fill an important gap by establishing a balance between these two features. Therefore, it offers important opportunities, especially for artificial intelligence -based applications and workloads that require low delay.
However, it is not always easy for new technologies to turn from laboratory to commercial products. In particular, large -scale production of two -dimensional materials such as graphene still contains serious difficulties. At this point, factors such as production costs and process optimization are expected to be decisive in POX’s future success. In spite of everything, the performance results show that such innovations can reach wider uses in the coming years.
Researcher Zhou Peng of Fudan University said that they have achieved their success by using artificial intelligence algorithms in process optimization. In a statement, it was emphasized that this technology may be effective not only in the academic world but also in industrial applications. It was also stated that POX could pave the way for more efficient storage solutions in both data centers and individual devices in the future. However, in order to achieve these goals, a careful progress strategy needs to be followed in the commercialization process of technology.
Liu Chunsen, one of the team members, said that they managed to produce a functional chip at the current stage. Currently, the integration of POX technology into existing smartphones and computers is being studied. If this is done, the limits of existing storage technologies that cause delay and overheating in the devices may be overcome. In addition, local artificial intelligence models may be able to operate more effectively on mobile devices.
What Pox promises is not only rapidly limited. It also has the potential to increase data safety and energy efficiency. In this respect, it is expected to have an important place in applications that require low power consumption. In particular, artificial intelligence, large data analytics and the Internet of objects are expected to increase the impact of POx. In addition to all these, how technology companies will commercialize this innovation continues to be the most critical question of the coming process.